Datasheet Details
| Part number | 2N6291 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.88 KB |
| Description | NPN Transistor |
| Datasheet | 2N6291-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2N6291.
| Part number | 2N6291 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.88 KB |
| Description | NPN Transistor |
| Datasheet | 2N6291-INCHANGE.pdf |
|
|
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·DC Current Gain- : hFE = 30-150@ IC= 2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC= 2.5A;
IB= 0.25A VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 7A;
IB= 3A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff Current IC= 2.5A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6291 | Power Transistors | RCA |
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2N6291 | Silicon Power Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2N6290 | NPN Transistor |
| 2N6292 | NPN Transistor |
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