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2N6292 - NPN Transistor

General Description

DC Current Gain- : hFE = 30-150@ IC= 2A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) Complement to Type 2N6107 APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

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isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Complement to Type 2N6107 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.