Datasheet Details
| Part number | 2N6292 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.78 KB |
| Description | NPN Transistor |
| Datasheet | 2N6292-INCHANGE.pdf |
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Overview: isc Product Specification isc Silicon NPN Power Transistor.
| Part number | 2N6292 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.78 KB |
| Description | NPN Transistor |
| Datasheet | 2N6292-INCHANGE.pdf |
|
|
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·DC Current Gain- : hFE = 30-150@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Complement to Type 2N6107 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W 2N6292 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
IB= 3A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff Current IC= 7A ;
VCE= 4V VCE= 80V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6292 | Silicon NPN Power Transistors | Savantic |
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2N6292 | Power Transistors | RECTRON |
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2N6292 | Bipolar Transistor | Multicomp |
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2N6292 | NPN Power Transistors | ON Semiconductor |
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2N6292 | NPN POWER TRANSISTORS | GE |
| Part Number | Description |
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