Download 2N6355 Datasheet PDF
Inchange Semiconductor
2N6355
DESCRIPTION - High DC current gain : h FE= 500(Min)@ IC= 4A - With TO-3 package - Low collector saturation - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ 150 Junction Temperature ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~200 ℃ MAX...