2N6355 Description
hFE= 500(Min)@ IC= 4A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and low -frequency swithing applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER...