| Part number | 2N6356 |
|---|---|
| Datasheet | 2N6356-INCHANGE.pdf |
| File Size | 183.61 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
hFE= 1500(Min)@ IC= 4A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and low -frequency swithing applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER...
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N6355 | NPN Transistor |
| 2N6357 | NPN Transistor |
| 2N6358 | NPN Transistor |
| 2N6322 | NPN Transistor |
| 2N6329 | Silicon PNP Power Transistor |
| 2N6330 | Silicon PNP Power Transistor |
| 2N6331 | Silicon PNP Power Transistor |
| 2N6343 | Thyristor |
| 2N6348 | Thyristor |
| 2N6377 | Silicon PNP Power Transistor |
