Datasheet Details
| Part number | 2N6356 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.61 KB |
| Description | NPN Transistor |
| Datasheet |
 2N6356 Datasheet
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| Part number | 2N6356 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.61 KB |
| Description | NPN Transistor |
| Datasheet |
2N6356 Datasheet
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·High DC current gain : hFE= 1500(Min)@ IC= 4A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and low -frequency swithing applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~200 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.09 ℃/W 2N6356 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A;
isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| 2N6355 | NPN Transistor |
| 2N6357 | NPN Transistor |
| 2N6358 | NPN Transistor |
| 2N6322 | NPN Transistor |
| 2N6329 | Silicon PNP Power Transistor |
| 2N6330 | Silicon PNP Power Transistor |
| 2N6331 | Silicon PNP Power Transistor |
| 2N6343 | Thyristor |
| 2N6348 | Thyristor |
| 2N6377 | Silicon PNP Power Transistor |