Inchange Semiconductor 2N6399
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N6399 |
|---|---|
| Datasheet | 2N6399 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Thyristor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-220 packaging●High surge capability
●Glass passivated junctions and center gate fire for greater parameter uniformity and stability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tp=8.3ms 60HZ MIN UNIT 800 V 800 V 12 A 100 A 0.5 W -40~125 ℃ -40~150 ℃ELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ VTM On-state voltage ITM= 24A IGT Gate-trigger current VD = 12 V; RL=100Ω VGT Gate-trigger voltage VD = 12 V; RL=0Ω Rth...