Inchange Semiconductor 2N6580
Silicon NPN Power Transistor
| Part No. | 2N6580 |
|---|---|
| Datasheet | 2N6580 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●High Voltage,High Speed
●Low Saturation Voltage
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min)
APPLICATIONS
●Off-line power supplies●Switching amplifiers
●Inverters/Converters
●Motor speed control circuits
●Switching regulator
●Solenoid& relay drivers
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9.0 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark