Inchange Semiconductor 2N6584
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N6584 |
|---|---|
| Datasheet | 2N6584 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min)
●High Current Capability
●Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for linear amplifiers, series pass regulators, and inductive switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 550 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W 2N6584 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6584ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO...