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2N6834 Datasheet PDF

Inchange Semiconductor 2N6834

Silicon NPN Power Transistor

Part No. 2N6834
Datasheet 2N6834 Download
Manufacturer
Inchange Semiconductor
Description Silicon NPN Power Transistor
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2N6834 datasheet page 1 preview

DESCRIPTION

● Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min)
●High Switching Speed

APPLICATIONS

●Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications:
●Switching regulators
●Inverters
●Solenoid and relay drivers
●Motor controls
●Deflection circuits

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VCEO(SUS) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous 850 V 450 V 6V 5A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4A IBM Base Current-Peak 8A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc Product Specification 2N6834 isc website: 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6834

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2N6834 page 2 preview