Inchange Semiconductor 2N6834
Silicon NPN Power Transistor
DESCRIPTION
● Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min)●High Switching Speed
APPLICATIONS
●Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications:●Switching regulators
●Inverters
●Solenoid and relay drivers
●Motor controls
●Deflection circuits
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VCEO(SUS) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous 850 V 450 V 6V 5A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4A IBM Base Current-Peak 8A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc Product Specification 2N6834 isc website: 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6834ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.