Inchange Semiconductor 2N6837
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N6837 |
|---|---|
| Datasheet | 2N6837 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
● Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min)●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications:●Switching regulators
●Inverters
●Motor controls
●Deflection circuits
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 15 A IBM Base Current-Peak 20 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.7 UNIT ℃/W isc website： 1 isc & isc...