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2N7055 - N-Channel MOSFET

Key Features

  • Drain Current: ID= 33A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High efficiency switch mode power supplies ·Active power factor correction ·Electronic lamp ballasts based on half bridge topology ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 33 A IDM Drain Current-Single (pulsed) 132 A PD Total Dissipation @TC=25℃ 180 W Tj Max.