Inchange Semiconductor 2SA1015
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1015 |
|---|---|
| Datasheet | 2SA1015 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage and High Current Vceo=-50V(Min.），Ic=-150mA(Max)●Excellent hFE Linearity
●Low Noise
●Complement to Type 2SC1815
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio frequency general purpose amplifierAPPLICATIONS
●Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SA1015 VALUE UNIT -50 V -50 V -5 V -150 mA -50 mA 400 mW 125 ℃ -55~125 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -100mA ; IB= -10mA VBE(sat) Base-Emitter Saturation Voltage IC= -100mA ; IB= -10mA ICBO Emitter Cutoff Current VCB...