Inchange Semiconductor 2SA1302
Silicon PNP Power Transistor
| Part No. | 2SA1302 |
|---|---|
| Datasheet | 2SA1302 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Current Capability●High Power Dissipation
●High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min)
●Complement to Type 2SC3281
APPLICATIONS
●Power amplifier applications●Recommend for 100W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.5 A PC 150 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： Free Datasheet INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1302 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.