Inchange Semiconductor 2SA1308
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1308 |
|---|---|
| Datasheet | 2SA1308 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage●Fast Switching Speed
●Complement to Type 2SC3308
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High current switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 1.0 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1308 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3.0A; IB= -0.15A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cut...
