Inchange Semiconductor 2SA1327
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1327 |
|---|---|
| Datasheet | 2SA1327 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@IC= -8A●High DC Current Gain- : hFE= 70(Min.)@ IC= -8A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Strobe flash applications.●Audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1327 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1327ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltag...