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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
STROBO FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS.
FEATURES . MIN. h FE of 70 at -2V, -8A . -10A Rated Collector Current . MAX. VcE(sat) of -0.5V at -8A Iq . 20W at 25°C Case Temperature
Unit in mm
10.3MAX„ 03.2 + 0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Base Current
DC Pulse
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VcEO v EB0 ic ICP
PC
T stg
RATING -50 -20
-10 -20
2.0 20
150
-55-150
UNIT
1. BASE 2. COLLECTOR 3. EMITTER
TOSHIBA Weight : 2 .
2SA1327 Datasheet
