2SA1327
2SA1327 is SILICON PNP TRANSISTOR manufactured by Toshiba.
FEATURES
. MIN. h FE of 70 at -2V, -8A . -10A Rated Collector Current . MAX. Vc E(sat) of -0.5V at -8A Iq . 20W at 25°C Case Temperature
Unit in mm
10.3MAX„ 03.2 + 0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Base Current
DC Pulse
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO Vc EO v EB0 ic ICP
T stg
RATING -50 -20
-10 -20
2.0 20
-55-150
UNIT
1. BASE 2. COLLECTOR 3. EMITTER
TOSHIBA Weight : 2 . lg
°C
2-10L1A
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Brakdown Voltage
ICBO Jebo VCEO
V CB =-50V, I E=0 V EB =-8V, I C =0
I c=-10m A, Ib=0
DC Current Gain h FE(l) (Note)
VCE=-2V, I C=-1A
Collector-Emitter...
