Datasheet Details
| Part number | 2SA1327 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.62 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1327_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1327 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.62 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1327_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@IC= -8A ·High DC Current Gain- : hFE= 70(Min.)@ IC= -8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe flash applications.
·Audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1327 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1327 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1327 | SILICON PNP TRANSISTOR | Toshiba |
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2SA1327 | SILICON POWER TRANSISTOR | SavantIC |
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2SA1327A | TRANSISTOR | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SA1329 | POWER TRANSISTOR |
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |
| 2SA1332 | POWER TRANSISTOR |
| 2SA1333 | POWER TRANSISTOR |
| 2SA1352 | Silicon PNP Power Transistor |