Datasheet Details
| Part number | 2SA1822 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.28 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1822-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1822 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.28 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1822-INCHANGE.pdf |
|
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·High Collector-Emitter Breakdown Voltage ·Excellent switching time ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications.
·High speed DC-DC converter application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -0.5 A 2 W 25 150 ℃ -55~150 ℃ INCHANGE Semiconductor 2SA1822 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1822 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1822 | Silicon NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
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