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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SA1822
High-Voltage Switching Applications High-Speed DC-DC Converter Application
2SA1822
Unit: mm
• Excellent switching times : ton = 1.0 µs (max), tf = 1.0 µs (max) at IC = −0.3 A
• High collector breakdown voltage: VCEO = −400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−400
V
Collector-emitter voltage
VCEO
−400
V
Emitter-base voltage
VEBO −7 V
Collector current
IC −1 A
Base current
IB −0.5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
25
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.
2SA1822 Datasheet
