Datasheet Details
| Part number | 2SA2063 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2063-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA2063 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2063-INCHANGE.pdf |
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|
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·Large current capacitance ·Wide ASO and high durability against breakdown ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·160V/12V,AF 90W output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -24 A 2.5 W 130 150 ℃ Tstg Storage Temperature -55~150 ℃ INCHANGE Semiconductor 2SA2063 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2063 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;
IB= -600mA VBE(on) Base-Emitter On Voltage IC= -6A ;
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