Inchange Semiconductor 2SA2062
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA2062 |
|---|---|
| Datasheet | 2SA2062 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Large current capacitance●Wide ASO and high durability against breakdown
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●140V/10V,AF 70W output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -20 A 2.5 W 110 150 ℃ Tstg Storage Temperature -55~150 ℃ INCHANGE Semiconductor 2SA2062 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2062ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -500mA VBE...