Datasheet Details
| Part number | 2SA2062 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.51 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2062-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA2062 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.51 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2062-INCHANGE.pdf |
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·Large current capacitance ·Wide ASO and high durability against breakdown ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·140V/10V,AF 70W output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -20 A 2.5 W 110 150 ℃ Tstg Storage Temperature -55~150 ℃ INCHANGE Semiconductor 2SA2062 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2062 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
IB= -500mA VBE(on) Base-Emitter On Voltage IC= -5A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA2062 | PNP Transistor | Sanyo Semicon Device |
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