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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2060
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SA2060
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) • High-speed switching: tf = 90 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−7
V
DC Collector current
IC
−2.0
A
Pulse
ICP
−3.5
JEDEC
―
Base current
IB
−200
mA
JEITA
SC-62
Collector power dissipation
Junction temperature
t = 10 s DC
PC
2.5
W
(Note 1)
1.0
Tj
150
°C
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.
2SA2060 Datasheet
