(1) High collector voltage: VCEO = -400 V (min) (2) High-speed switching: tf = 0.3 µs (max) (IC = -1.0 A)
3. Packaging and Internal Circuit
2SA2034
1. Base 2. Collector (Heatsink) 3. Emitter
New PW-Mold
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-400
V
Collector-emitter voltage
VCEO
-400
Emitter-base voltage
VEBO
-7
Collector current (DC)
(Note 1)
IC
-2
A
Collector current (.
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Bipolar Transistors Silicon PNP Triple-Diffused Type
2SA2034
1. Applications
• High-Voltage Switching
2. Features
(1) High collector voltage: VCEO = -400 V (min) (2) High-speed switching: tf = 0.3 µs (max) (IC = -1.0 A)
3. Packaging and Internal Circuit
2SA2034
1. Base 2. Collector (Heatsink) 3. Emitter
New PW-Mold
4.