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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154
2SA2154
General-Purpose Amplifier Applications
• High voltage and high current : VCEO = −50 V, IC = −100 mA (max)
• Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• High hFE : hFE = 120~400 • Complementary to 2SC6026
Absolute Maximum Ratings (Ta = 25°C)
0.6±0.05 0.35±0.05
0.15±0.05
Unit: mm
0.2±0.05
1
3
2 0.8±0.05 1.0±0.05
0.1±0.05
+0.02 -0.04
Characteristic
Symbol
Rating
Unit
0.48
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
0.1±0.05
Emitter-base voltage
VEBO
−5
V
Collector current Base current Collector power dissipation
IC
−100
mA
IB
−30
mA
PC
50
mW
1.BASE
2.EMITTER
fSM
3.
2SA2154 Datasheet
