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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA2154CT
2SA2154CT
General Purpose Amplifier Applications
High voltage and high current : VCEO = 50V, IC = 100mA (max) Excellent hFE linearity
: hFE (IC = 0.1 mA) / hFE (IC = 2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
30
mA
Collector power dissipation
PC
100*
mW
Junction temperature Storage temperature range
Tj
150
°C
Tstg
55 to 150
°C
* : Mounted on FR4 board (10 mm 10 mm 1 mmt)
CST3
1.BASE 2.EMITTER 3.
2SA2154CT Datasheet
