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2SA2154MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154MFV
General-Purpose Amplifier Applications
• High voltage and high current : VCEO = −50 V, IC = −150 mA (max)
• Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• High hFE : hFE = 120 to 400 • Complementary to 2SC6026MFV
Absolute Maximum Ratings (Ta = 25°C)
1.2 ± 0.05
0.8 ± 0.05 0.4 0.4
0.22 ± 0.05
Unit: mm
1.2 ± 0.05 0.80 ± 0.05
1
1
3 2
0.32 ± 0.05
0.13 ± 0.05
0.5 ± 0.05
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage Emitter-base voltage Collector current
VCEO VEBO
IC
−50
V
−5
V
−150
mA
VESM
1.BASE 2.EMITTER 3.
2SA2154MFV Datasheet
