Datasheet Details
| Part number | 2SA2097 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 251.52 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2097-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA2097 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 251.52 KB |
| Description | PNP Transistor |
| Datasheet | 2SA2097-INCHANGE.pdf |
|
|
|
·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters ·Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICP Collector Current-Continuous -10 A IB Base Current -0.5 A PC Collector Power Dissipation 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA2097 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2097 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BVCBO Collector-Base Breakdown Voltage IC=-1mA;
IB=0 -50 - V BVCEO Collector-Emitter Breakdown Voltage IC=-10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA2097 | Silicon PNP Transistor | Toshiba Semiconductor |
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|---|---|
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