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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2097
High-Speed Swtching Applications DC-DC Converter Applications
2SA2097
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation: VCE (sat) = −0.27 V (max) • High-speed switching: tf = 55 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−7
V
Collector current
DC
IC
Pulse
ICP
−5 A
−10
Base current
IB
−0.5
A
Collector power dissipation
Ta = 25°C PC
Tc = 25°C
1
W
JEDEC
20
JEITA
― ―
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.
2SA2097 Datasheet
