High Collector Current:: IC= -3A
Collector-Emitter Breakdown Voltage
: V(BR)CEO= -40V(Min)
Complement to Type 2SC790
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
10 Watts output applications
Power amplifier applications
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isc Silicon PNP Power Transistor
2SA490
DESCRIPTION ·High Collector Current:: IC= -3A ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -40V(Min) ·Complement to Type 2SC790 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·10 Watts output applications ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
IE
Emitter Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SA490 Datasheet
