Datasheet Details
| Part number | 2SA490 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SA490-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA490.
| Part number | 2SA490 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.39 KB |
| Description | PNP Transistor |
| Datasheet | 2SA490-INCHANGE.pdf |
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·High Collector Current:: IC= -3A ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -40V(Min) ·Complement to Type 2SC790 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·10 Watts output applications ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA490 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA490 | Silicon PNP Transistor | Toshiba |
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2SA490 | Silicon POwer Transistors | SavantIC |
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