Datasheet Details
| Part number | 2SA496 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.09 KB |
| Description | PNP Transistor |
| Datasheet | 2SA496-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA496 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.09 KB |
| Description | PNP Transistor |
| Datasheet | 2SA496-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -30V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous 1 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA496 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA496 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA496 | Silicon PNP Transistor | Toshiba |
| Part Number | Description |
|---|---|
| 2SA490 | PNP Transistor |
| 2SA483 | PNP Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |
| 2SA1012-D | PNP Transistor |
| 2SA1013 | PNP Transistor |