2SA496 Description
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -30V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA496 TC=25℃ unless otherwise specified SYMBOL PARAMETER...