2SA496 Datasheet and Specifications PDF

·Collector-Emitter Breakdown Voltage- V(BR)CEO= -30V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and r.

30 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -0.8 V -1.3 V -1.0 μA IEBO Emitter Cutoff Curren.

: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.) • Complementary to 2SC495 and 2SC496. 2SA496 2S.

* Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.)
* Complementary to 2SC495 and 2SC496. 2SA496 2SA505, 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage 2SA505 2SA496 Collector-Emitter Voltage Emitter-Base Voltage Collector Current 2SA505 2SA496.