Datasheet Details
| Part number | 2SA635 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.23 KB |
| Description | PNP Transistor |
| Datasheet | 2SA635-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA635.
| Part number | 2SA635 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.23 KB |
| Description | PNP Transistor |
| Datasheet | 2SA635-INCHANGE.pdf |
|
|
|
·With TO-202 package ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE -60 -60 -5 -1.0 10 150 -55~150 UNIT V V V A W ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA635 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=-100μA, IE=0 V(BR)CEO Collector-emitter breakdown voltage IC=-1mA , IB=0 V(BR)EBO Emitter-base breakdown voltage IE= -100μA, IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-1.5A;
IB= -0.15A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-2.0A;
| Part Number | Description |
|---|---|
| 2SA614 | Silicon PNP Power Transistor |
| 2SA671 | PNP Transistor |
| 2SA680 | PNP Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |
| 2SA1012-D | PNP Transistor |