Inchange Semiconductor 2SB1095
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB1095 |
|---|---|
| Datasheet | 2SB1095 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current:: IC= -4A●Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -3A
●Complement to Type 2SD1586
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for power supplies or a variety of drives in audio and other equipment.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1095 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; I...