Datasheet Details
| Part number | 2SB1145 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.79 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1145-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlingtion Power Transistor.
| Part number | 2SB1145 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.79 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1145-INCHANGE.pdf |
|
|
|
·High DC Current Gain- : hFE= 2000(Min.)@IC= -1.5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -1.5A ·Good Linearity of hFE ·With TO-220F package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current driver applications.
·Power driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ Tc=25℃ Junction Temperature Storage Temperature Range -120 V -120 V -6 V -3 A -5 A 2 W 20 150 ℃ -55~150 ℃ 2SB1145 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1145 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1149 | PNP Transistor |
| 2SB1101 | PNP Transistor |
| 2SB1102 | PNP Transistor |
| 2SB1103 | PNP Transistor |
| 2SB1105 | PNP Transistor |
| 2SB1106 | PNP Transistor |
| 2SB1133 | PNP Transistor |
| 2SB1134 | PNP Transistor |
| 2SB1135 | PNP Transistor |
| 2SB1136 | PNP Transistor |