DARLINGTON
Low collector saturation voltage APPLICATIONS
For high current driver and power driver applications PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum rati
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1145
DESCRIPTION ·With TO-220F package ·High DC current gain. ·DARLINGTON ·Low collector saturation voltage APPLICATIONS ·For high current driver and power driver applications PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -3 -5 20 W UNIT V V V A A
SavantIC Semiconductor
www.DataSheet4U.