2SB1145
2SB1145 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220F package
- High DC current gain.
- DARLINGTON
- Low collector saturation voltage APPLICATIONS
- For high current driver and power driver applications PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -3 -5 20 W UNIT V V V A A
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-100µA; IE=0 IC=-5m A; IB=0 IC=-1.5A ; IB=-3m A IC=-1.5A ; IB=-3m A VCB=-120V;IE=0 VEB=-5V;IC=0 IC=-1.5A ; VCE=-3V 2000 MIN -120 -120
SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO h FE
TYP.
UNIT V V
-1.5 -2.0 -50 -3.0
V V µA m A
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline...
