Inchange Semiconductor 2SB1272
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB1272 |
|---|---|
| Datasheet | 2SB1272 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min)●High DC Current Gain- : hFE=1000(Min)@ (VCE= -2V, IC= -1A)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -5 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1272 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB1272 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -7 V VCE(sat) Collecto...