Inchange Semiconductor 2SB1339
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB1339 |
|---|---|
| Datasheet | 2SB1339 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)●High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -2A)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1339 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1339ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; RBE= ∞ -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -7 V VCE(sat)-1 Colle...