With TO-220C package
High DC current gain
Low saturation voltage
DARLINGTON APPLICATIONS
For low frequency power amplifier and power driver applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAME
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SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1339
DESCRIPTION ·With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -6 -6 -10 2 W UNIT V V V A A
SavantIC Semiconductor
www.DataSheet4U.
2SB1339 Datasheet
