Datasheet Details
| Part number | 2SB1361 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.12 KB |
| Description | PNP Transistor |
| Download | 2SB1361 Download (PDF) |
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| Part number | 2SB1361 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.12 KB |
| Description | PNP Transistor |
| Download | 2SB1361 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2052 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -15 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -7A;
IB= -0.7A VBE(on) Base -Emitter On Voltage IC= -7A;
isc Silicon PNP Power Transistor 2SB1361.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1361 | Silicon PNP Transistor | Panasonic Semiconductor |
 |
2SB1361 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1362 | PNP Transistor |
| 2SB1366 | PNP Transistor |
| 2SB1367 | PNP Transistor |
| 2SB1368 | PNP Transistor |
| 2SB1369 | PNP Transistor |
| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |