Datasheet Details
| Part number | 2SB1367 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.54 KB |
| Description | PNP Transistor |
| Download | 2SB1367 Download (PDF) |
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| Part number | 2SB1367 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.54 KB |
| Description | PNP Transistor |
| Download | 2SB1367 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A) ·Complement to Type 2SD2059 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1367 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1367 | TRANSISTOR | Korea Electronics |
 |
2SB1367 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1361 | PNP Transistor |
| 2SB1362 | PNP Transistor |
| 2SB1366 | PNP Transistor |
| 2SB1368 | PNP Transistor |
| 2SB1369 | PNP Transistor |
| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |