2SB1392 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA;.

