Renesas Electronics 2SB1392
The 2SB1392 is grouped by hFE1 as follows.| Part No. | 2SB1392 |
|---|---|
| Datasheet | 2SB1392 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC PC * 1 Tj Tstg 1. Base 2. Collector 3. Emitter Ratings Unit –70 V –60 V –5 V –4 A –8 A 2 W 25 150 °C –55 to +150 °C 2SB1392ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Collector to base breakdown V(BR)CBO –70 — voltage Collector to emitter breakdown V(BR)CEO –60 — voltage Emitter to base breakdown V(BR)EBO –5 — voltage Collector cutoff current I CBO — — I CEO — — DC current transfer ratio hFE1*2 60 — hFE2 35 — Base to emitter voltage VBE — — Collector to emitter saturation VCE(sat) — — voltage Base to emitter saturation VBE(sat) — — voltage Notes: 1. Pulse test. 2. The 2SB1392 is grouped by hFE1 as follows. Max Unit — V — V — V –10 µA –10 200 — –1.0 V –1.0 V –1.2 V Test conditio...
