2SB1393 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Max,)@ IC= -3A Complement to Type 2SD1985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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2SB1393 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1393
Manufacturer	Inchange Semiconductor
File Size	213.62 KB
Description	PNP Transistor
Datasheet	2SB1393 Datasheet

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isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Max,)@ IC= -3A ·Complement to Type 2SD1985 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.