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Power Transistors
2SB1393, 2SB1393A
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD1985 and 2SD1985A
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
s Features
q q q
7.5±0.2 Solder Dip 4.0 14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1393 2SB1393A 2SB1393 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings –60 –80 –60 –80 –5 –5 –3 25 2.0 150 –55 to +150 Unit V
emitter voltage 2SB1393A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
16.7±0.
2SB1393 Datasheet
