2SB1404 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) - High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SB1404 |
|---|---|
| Description | PNP Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 209.73 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SB1404 | SavantIC | SILICON POWER TRANSISTOR |
| 2SB1400 | Hitachi Semiconductor | Silicon PNP Epitaxial Transistor |
| 2SB1407L | Hitachi Semiconductor | Silicon PNP Epitaxial Transistor |
| 2SB1409S | Hitachi Semiconductor | Silicon PNP Epitaxial Transistor |
| 2SB1405 | SANYO | PNP Epitaxial Silicon Transistor |