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2SB1400
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
1 kΩ (Typ)
400 Ω (Typ) 3
2SB1400
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Ratings –120 –120 –7 –6 –10 2 25 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 V V Unit V V V µA Test conditions I C = –0.