2SB1400 Overview
Description
With TO-220Fa package - High DC current gain - Low collector saturation voltage - DARLINGTON APPLICATIONS - For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -6 -10 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1400 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA; RBE== IC=-100µA; IE=0 IE=-50mA; IC=0 IC=-3A ;IB=-6mA IC=-6A ;IB=-60mA IC=-3A ;IB=-6mA IC=-6A ;IB=-60mA VCB=-100V; IE=0 VCE=-100V; RBE== IC=-3A ; VCE=-3V 1000 MIN -120 -120 -7 -1.5 -3.0 -2.0 -3.5 -10 -10 20000 TYP. MAX UNIT V V V V V V V µA µA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1400 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3.
