| Part Number | 2SB1400 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB1400
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
1 kΩ (Typ)
400 Ω (Typ) 3
2SB1400
Absolute Maximum Ratings (Ta .
C = *6 A, IB = *60 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 . |
2SB1400 Datasheet and Specifications PDF
The 2SB1400 is a Silicon PNP Epitaxial Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SB1400 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable op. ustaining Voltage IC= -25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-0.1mA; IE= 0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA VCE(sat) -2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA VBE(sat). |
| Part Number | 2SB1400 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter . Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA; RBE== IC=-100µA; IE=0 IE=-50mA; IC=0 IC=-3. |