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2SB1407(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SB1407(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
Ratings –35 –35 –5 –2.5 –3 18 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min –35 –35 –5 —
1
Typ — — — — — — — —
Max — — — –20 320 — –1.5 –1.
2SB1407S Datasheet
