High DC Current Gain-
: hFE = 2000(Min)@ IC= -2A
Low Collector Saturation Voltage-
: VCE(sat) = -2.0V(Max.) @IC= 5A
Complement to Type 2SD2237
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power linear and switch
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -2A ·Low Collector Saturation Voltage-
: VCE(sat) = -2.0V(Max.) @IC= 5A ·Complement to Type 2SD2237 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-8
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1478
isc website：www.iscsemi.
2SB1478 Datasheet
