Datasheet4U Logo Datasheet4U.com

2SB1478 - Silicon PNP Darlington Power Transistor

Download the 2SB1478 datasheet PDF. This datasheet also covers the 2SB1478_NewJerseySemi variant, as both devices belong to the same silicon pnp darlington power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

High DC Current Gain: h FE =2000(Min)@l c =-2A Low Collector Saturation Voltage: VCE(Sat)= -2.0V(Max.) @lc= 5A

M 1.BASE 2.

E-££ »' .

n B fc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1478_NewJerseySemi-Conductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB1478
Manufacturer New Jersey Semi-Conductor
File Size 90.96 KB
Description Silicon PNP Darlington Power Transistor
Datasheet download datasheet 2SB1478 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
C/ 'J. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor 2SB1478 JZ ^^^^^^B 1 -vw——^—W—t—* DESCRIPTION • High DC Current Gain: h FE =2000(Min)@l c =-2A • Low Collector Saturation Voltage: VCE(Sat)= -2.0V(Max.) @lc= 5A • Complement to Type 2SD2237 ini^i^ni i p M 1.BASE 2. COLLECTOR 3.BUIITTER i ii 1 2 3 E-££ »' . ,..„ TO-247 package m— tK n B fc. ^ APPLICATIONS • Designed for power linear and switching applications. A' p r • I i - - : : '<:' 1:1)1 j : ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT K fr-Y ;! ! '.